AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
نویسندگان
چکیده
منابع مشابه
AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
The effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from −8.15 to −4.21 V when the device was treated with an Al2O3 layer. The leakage current was reduced from 2.9 × 10−5 to 4.2 × 10−7 mA/mm, and the ION/IOFF ratio increased from...
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ژورنال
عنوان ژورنال: Crystals
سال: 2017
ISSN: 2073-4352
DOI: 10.3390/cryst7050146